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    • 专利摘要:
    The invention relates to an optical coupler (320) integrated on a substrate, for optically coupling a laser and a waveguide, and comprising: - an external element (321) comprising two arms (321B) separated by a notch, this being delimited laterally by two first spacing walls decreasing towards the bottom of the notch; a central element (323), located in the notch, delimited laterally by two second walls, and having a first region where the two second walls are in direct contact with said first two walls to the bottom of the notch; and an intermediate element (322) extending between the outer element and the central element. The optical index of the central element (323) is greater than the optical index of the intermediate element (322), itself greater than the optical index of the arms of the outer element (321). Such an optical coupler provides an efficient coupling between a laser emitting in the middle infrared and a waveguide integrated on a substrate.
    公开号:FR3026497A1
    申请号:FR1459050
    申请日:2014-09-25
    公开日:2016-04-01
    发明作者:Julien Favreau；Salim Boutami；Mickael Brun
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] OPTICAL COUPLER INTEGRATED ON A SUBSTRATE AND COMPRISING THREE ELEMENTS
    [0002] TECHNICAL FIELD The present invention belongs to the field of integrated photonics, making it possible to produce miniaturized light treatment devices, in which optical and electronic devices are integrated together on the same substrate. The invention relates more particularly to the field of couplers for optically coupling a laser and a waveguide integrated on the same substrate. STATE OF THE PRIOR ART In this field of photonics, a sufficiently effective means for producing a light source in the substrate material is not known to date, which is why it is preferred to transfer a light source onto the substrate, and to couple optically this source with a waveguide forming part of a photonic circuit formed in the substrate. Such a coupling is for example implemented in the field of optical telecommunications, for coupling a light beam at 1550 nm. An example of a system implementing such a coupling is illustrated in FIGS. 1A and 1B, respectively according to a profile view and a sectional view. The laser 1 is made of III-V material, that is to say formed of at least one element of the column III and at least one element of the column V of the periodic table of the elements. The laser 1 is bonded over a substrate 2 in which extends a waveguide having a silicon core (Si), directly surrounded by a silica sheath (5i02). A thin layer of silica is interposed between the laser 1 and the substrate 2, and serves as a molecular bonding interface between the laser and the substrate, while being fine enough to allow a transfer of the mode from the first to the second. The laser and the waveguide being formed of different optical index materials, it is necessary to interpose an optical coupler between them. The assembly constituted by the optical coupler and the waveguide forms a guide element 3 comprising a silicon core, directly surrounded by a silica sheath. The system is shown in FIG. 1B, in a section passing through this guiding element 3 (in hatching), and parallel to the plane of the face of the substrate receiving the laser 1. In a first region 31, the guiding element has a reduced width, and the energy produced by the laser 1 remains confined in it. A second region 32 of the guide member has a progressively increasing width and forms the optical coupler. The optical coupler can be named "tap", with reference to its refined form. A third region 33 of the guide member has a constant width and forms the waveguide.
    [0003] Due to its progressively increasing width, the optical coupler performs a progressive mode transition from the laser 1 to the waveguide 33. In other words, a part of the energy produced by the laser 1 is transferred to the waveguide. The mode transition is schematically represented by the series of curves 41 to 44, illustrating the light intensity distribution in the laser and the substrate. Such a coupler has good performance for a laser emitting at 1550 nm. However, it is not possible to use this same coupler with a laser emitting at other wavelengths, especially greater than 2 μm. Indeed, at these wavelengths, the silica is highly absorbent. It is therefore impossible to use a silica waveguide. The coupler being adapted to a silica waveguide, it is not adapted either to such wavelengths. An object of the present invention is to provide an optical coupler, for effectively coupling a laser and a waveguide, regardless of the emission wavelength of said laser. In particular, an object of the present invention is to provide an optical coupler for effectively coupling a laser and a waveguide, the laser emitting at a wavelength greater than 2 μm, typically between 2 and 10 μm. in particular between 3 and 10 μm and more particularly between 4 and 10 μm. DISCLOSURE OF THE INVENTION This objective is achieved by means of an optical coupler integrated on a substrate, for optically coupling a laser and a waveguide, the optical coupler comprising: an external element, having a base from which extend two arms separated by a notch, said notch being delimited laterally by two first spacing walls decreasing towards the bottom of the notch; a central element, located in the notch, delimited laterally by two second walls, and having a first region where said two second walls are in direct contact with said first two walls to the bottom of the notch; and an intermediate member, extending between the outer member and the central member, directly between a first wall and a second wall, where a first wall is not in direct contact with a second wall; the optical index of the central element being greater than the optical index of the intermediate element, itself greater than the optical index of the base of the external element. Advantageously, the intermediate element also extends, inside the notch, directly on an upper face and on a lower face of the central element. The central element may be germanium or an alloy of germanium and silicon. Similarly, the intermediate element may be silicon, or an alloy of germanium and silicon. Finally, the outer member may comprise silica, aluminum oxide or aluminum nitride. The optical coupler advantageously consists of three slices extending one after the other, comprising: a first slice, intended to be under the laser with the exception of an output region of the laser, and constituted by at least a portion of the base of the outer member; a second wafer, directly adjacent to the first wafer, intended to be under said laser output region, and including one end of the central element; and a third slice, directly adjacent to the second slice. The optical coupler is advantageously intended to optically couple a laser and a waveguide, so that the optical index of the first slice is smaller than the effective index of the laser, and the optical index of the intermediate element is greater than the effective index of the laser. The material of the first slice consists for example of a silica matrix in which are integrated pads containing germanium and silicon.
    [0004] The optical coupler is advantageously intended to optically couple a laser and a waveguide, so that: the effective index in the second slice grows progressively from the input to the output of the second slice, from an adjacent face at the first slice to a face adjacent to the third slice; the effective input index of the second slice is smaller than the effective index of the laser; and the effective index at the output of the second slice is greater than the effective index of the laser.
    [0005] The optical coupler is still advantageously intended to optically couple a laser and a waveguide, so that: a region of the optical coupler, of the same width as this one, situated under the central element and in direct contact with its face lower, defines a lower sheath of the coupler; a region of the optical coupler, of the same width as this one, located on the central element and in direct contact with its upper face, defines an upper cladding of the coupler; and at the output of the second slice, the equivalent optical index of the lower cladding of the coupler and the equivalent optical index of the upper cladding of the coupler are each smaller than the effective index of the laser. The optical coupler is still advantageously intended to optically couple a laser and a waveguide, so that: a region of the optical coupler, of the same width as this one, situated under the central element and in direct contact with its lower face defines a lower sheath of the coupler; and the thickness of the lower cladding of the coupler is greater than or equal to X0 / 2, where lo is the emission wavelength of the laser in vacuum.
    [0006] The optical coupler is still advantageously intended to optically couple a laser and a waveguide, so that the effective index in the third slice grows progressively from the input to the output of the third slice, until it reaches the value of the effective index of the waveguide.
    [0007] The optical coupler may be in particular for optically coupling a quantum cascade laser and a waveguide. The invention also relates to a method of manufacturing an optical coupler as described above, said method comprising the steps of: depositing, on a substrate, a first layer intended to form the central element, and etching first layer; deposition of a second layer, covering the first etched layer, and planarization of the second layer; etching the at least one first layer to form a housing flanking an end of the first etched layer; filling the housing, to form the outer element of the optical coupler. The invention finally relates to an integrated optical guidance system on a substrate, characterized in that it comprises: an optical coupler as explained above; a waveguide, located in the extension of the optical coupler so that a core of said waveguide extends in the extension of the central element and is formed of the same material, and a sheath of said guide wave extends in the extension of the intermediate element and is formed of the same material; and a laser, located above at least a portion of the optical coupler; the optical coupler being adapted to optically couple said laser and said waveguide.
    [0008] BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIGS. 1A and 1B schematically illustrate a system comprising an optical coupler according to the prior art; FIGS. 2A to 2C schematically illustrate a first embodiment of a system comprising an optical coupler according to the invention; FIGS. 3A and 3B illustrate the optical coupler as represented in FIGS. 2A to 2C; FIGS. 4A and 4B schematically illustrate a second system embodiment comprising an optical coupler according to the invention; FIG. 5 illustrates the optical coupling produced by an optical coupler according to the invention; and FIG. 6 illustrates an exemplary method of manufacturing an optical coupler according to the invention. DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS Firstly, a first embodiment of optical guiding system 1000, integrated on a substrate, and comprising an optical coupler according to the invention will be illustrated. The coupler according to the invention is particularly suitable for coupling a laser emitting at a wavelength of between 2 and 10 μm, and a waveguide integrated on a silicon substrate. Let an orthonormal coordinate system (Oxyz), FIG. 2A be a side view, in the plane (z0y), FIG. 2B is a sectional view in a plane parallel to the plane (z0x) and passing through the center of the optical coupler, and FIG. 2C corresponds to three sectional views in planes parallel to the plane (x0y) and for different values of z. The axis (Oz) corresponds to lengths, and extends parallel to the direction of propagation of a light beam in the waveguide as described below. The axis (Oy) corresponds to heights, and extends parallel to a stacking direction of the laser on the substrate as described below. The axis (Ox) corresponds to widths. The optical guide system 1000 comprises a laser 100 emitting in the mid-infrared, for example at a wavelength of between 2 and 10 μm, in particular between 3 and 10 μm and more particularly between 4 and 10 μm.
    [0009] The laser 100 is here a III-V laser, formed by an active waveguide. The sheath 101 of this active guide is indium phosphide (InP). The laser 100 is preferably a quantum cascade laser, or CICL, in which quantum wells allow the emission of photons in the mid-infrared, from an excitation by electrons. The laser 100 is formed on the top of a substrate in which are integrated a waveguide and an optical coupler according to the invention. The laser is produced in particular above at least a portion of the optical coupler according to the invention. The substrate 200 may be made of glass, silicon or III-V material such as the InP. It is preferably a silicon substrate, the silicon making it possible to effectively co-integrate optical and electronic elements. The optical guide system 1000 comprises a waveguide 330, forming a passive guide, in the substrate. In the following, the term "waveguide" refers to the passive waveguide 330. The waveguide 330 is adapted to propagate a light beam at a wavelength greater than 2 μm, without absorption. In the following, all the effective indices and optical indices denote indices of refraction in the middle infrared. Throughout the text, it is considered that propagation without absorption corresponds to an absorption of less than 1 dB / cm.
    [0010] As a reminder, the effective index of a mode, in particular the effective index of the mode of a waveguide, is defined in the following way: ## EQU1 ## where neff is the effective index of the mode considered , the wavelength of the light beam propagating in this medium, and the phase constant of this medium. The phase constant depends on the wavelength and the mode of the light beam propagating in this medium, as well as the properties of this medium (in particular indices and geometry). The phase constant is defined by: A (z) = A (0) exp (yz), where A (z) is the complex amplitude as a function of z of a light beam propagating in a medium such as a waveguide, and the is the imaginary part of y. Throughout the text, the term "effective index" designates the effective index of the fundamental mode of the light beam propagating in this medium, at the central wavelength of this light beam. The fundamental mode is the zero-order mode, which is generally quasi-Gaussian. It can sometimes be considered that the effective index designates the average optical index of the medium as it is "seen" by a mode of the light beam propagating in this medium. To facilitate understanding, such an image is used in the explanations that follow, without prejudice to the rigorous definition given above. In the waveguide, the fundamental mode extends mainly in the core, on which it is centered, and also overflows on the sheath, so that the effective index of the mode in the waveguide is an intermediate value. between the core index and the cladding index.
    [0011] In order not to be absorbent at wavelengths between 2 and 10 μm, the waveguide 330 does not contain silica. It is preferably a waveguide having a core 331 of germanium or an alloy of germanium and silicon, and a sheath 332 of silicon or an alloy of germanium and silicon. The materials of the core 331 and the sheath 332 are chosen so that the optical index of the core 331 is greater than the optical index of the sheath 332. The optical index of the silicon is about 3.4. The optical index of silicon-germanium with 40% germanium is about 3.6. Thus, the effective index in the waveguide is greater than 3.4, for example of the order of 3.5.
    [0012] Silicon and germanium, as well as alloys comprising these two elements, are perfectly compatible with known epitaxial manufacturing processes. Preferably, the sheath 332 is formed entirely of the substrate material.
    [0013] The waveguide 330 is located in the extension of an optical coupler 320, also integrated in the substrate. In Fig. 2A, the waveguide 330 is shown in dashed hatching and the optical coupler 320 is shown in dotted-line hatching. The optical coupler preferably has a rectangular parallelepiped shape, of the same width as the laser. It is intended to be partly under the heart of the laser. The optical coupler 320 comprises: an outer member 321, shown in broad hatches in Figures 2B and 2C; an intermediate element 322; and a central element 323, shown in fine hatching in Figures 2B and 2C.
    [0014] The outer member 321 is made from a first material, said low index material. In the following, we will give more details on the optical index of the external element 321. The length of the external element defines the length of the optical coupler according to the invention.
    [0015] The outer member 321 has a base 321A, from which extend two arms 321B. The base has in particular a rectangular parallelepiped shape. In Figure 2C, on the left, is shown a sectional view of the optical coupler, in a plane passing through this base. The base is intended to lie entirely under the laser 100.
    [0016] The space between the two arms 321B is called "notch". The notch is delimited laterally by two first walls 321C each belonging to one of the arms 321B. Each first wall is defined by a generator, extending in a plane parallel to the plane (z0x), and by a height. The first two walls 321C progressively separate from each other, as and when one moves away from the bottom of the notch. In Figure 2C, in the center, there is shown a sectional view of the optical coupler, in a plane passing through this notch, near the bottom of the notch. In Figure 2C, on the right, there is shown a sectional view of the optical coupler, in a plane passing through this notch, near the entrance of the notch. It is observed that the distance E between the first two walls increases as one moves away from the bottom of the notch, this gap being defined along the axis (Ox). In the example shown in Figures 2A to 2C, the first walls 321C are flat, and the spacing therebetween increases linearly. The first walls 321C may, however, have any other non-planar shape, such that the spacing between the first walls is monotonous increasing. Preferably, the two arms are symmetrical relative to a plane parallel to the plane (x0y) and passing through the bottom of the notch. The central element 323 is inside the notch. It is made of a second material identical to the material of the core 331 of the waveguide. It is delimited laterally by two second walls 323C. Each second wall is defined by a generator, extending in a plane parallel to the plane (z0x), and by a height. In a first region 323D (see Figure 3A), the two second walls 323C have a decreasing spacing as one approaches the bottom of the notch. Here again, the spacing corresponds to a dimension along the axis (Ox). In this first region 323D, the two second walls 323C are also in direct contact with the first two walls 321C, to the bottom of the notch. The central element 323 is thus refined on the side of the bottom of the notch, and laterally surrounded by the outer member 321, then gradually widens so that the outer member 321 gradually leaves room for the central element 323 In the first region 323D, the central element 323 completely fills the notch, between a first height and a second height in the notch. In the first region 323D, the shape of each second wall 321C therefore corresponds to the shape of the first wall with which it is in direct contact. Thus, the spacing between the second walls 323C is monotonous increasing in the first region 323D, and grows for example linearly. In Figure 2C, in the center, there is shown a sectional view of the optical coupler in a plane passing through this region 323D. Each wall 323C is in direct contact with a wall 321C. In Figure 2C, on the right, there is shown a sectional view of the optical coupler, in a plane passing outside this region 323D. As detailed below, a portion of the intermediate element 322 is interposed between a wall 323C and a wall 321C.
    [0017] Outside the region 323D, the second walls 323C preferably have a constant spacing therebetween. At the output of the optical coupler, the central element 323 merges with the core 331 of the waveguide 330. Thus, at the output of the optical coupler, the spacing between the second walls 323C is equal to the width of the core 331 of the guide In other words, at the output of the optical coupler, the heart of the waveguide extends in the extension of the central element. Preferably, the two second walls 323C are symmetrical relative to a plane parallel to the plane (x0y) and passing through the bottom of the notch.
    [0018] The intermediate element 322 is formed of a third identical material to the material forming the sheath 332 of the waveguide. The intermediate element 322 is preferably of silicon, like the substrate. The intermediate element 322 extends on each side of the central element 323, directly between a first wall 321C and a second wall 323C. The intermediate element extends outside the 323D region. At the output of the optical coupler, the intermediate element 322 merges with the sheath 332 of the waveguide 330. Thus, at the output of the optical coupler, the sheath of the waveguide extends in the extension of the intermediate element . The optical index of the central element 323 is greater than the optical index of the intermediate element 322, itself greater than the optical index of the arms of the outer element 321. The optical index of the element external 321 is for example less than 2, or even less than 1.5. It may be less than half the optical index of the central element 323.
    [0019] For this, the outer element may be aluminum nitride (AIN), which is poorly absorbent at wavelengths greater than 2 microns, and has the further advantage of being an excellent thermal conductor. Alternatively, the outer member is silica. Silica is absorbent at wavelengths greater than 2 μm, but this absorption can be tolerated since the length of the external element is small (which is not the case of the waveguide which itself must not contain silica). In addition, the portion of the outer member intended to be located under the laser is partially isolated from the laser core by the lower sheath of the laser, which makes the laser less sensitive to absorption by silica.
    [0020] In another variant, the external element may be aluminum oxide (Al 2 O 3). The central element 323 and the intermediate element 322 of the coupler are formed of the same materials as the core or the sheath of the waveguide 330.1Is together participate in the coupling towards the waveguide 330, this waveguide being adapted to propagate without absorption a light beam at a wavelength of between 2 and 10 μm. The width variations of the central element 323, the intermediate element 322 and the outer element 321 are progressive. As a result, a progressive variation of the effective index of the optical coupler is made, allowing an adiabatic mode transition from the laser 100 to the waveguide 330 at a wavelength of between 2 and 10 μm. This laser mode transition designates the transfer in the waveguide of at least a portion of the power from the fundamental mode of the laser to the 0-mode waveguide mode, generally the quasi-Gaussian mode of operation. Order 0. The base of the outer member 321 is adapted to be placed under at least a portion of the laser. The base of the outer element 321 has an optical index lower than that of the intermediate element 322. In particular, and as detailed below, the optical index of the intermediate element 322 is greater than the effective index of the laser, and the optical index of the base of the outer element is less than this same effective index. Thus, when the substrate has an optical index greater than the effective index of the laser, the base of the external element, intended to be placed between the laser and the substrate, prevents losses by optical leakage of the laser to the substrate. It may be noted that the intermediate element is advantageously formed in the material of the substrate. In this case, if the substrate has an optical index greater than the effective index of the laser, then the optical index of the intermediate element is greater than the effective index of the laser.
    [0021] In practice, a laser emitting at a wavelength of between 2 and 10 μm generally has an effective index less than the optical index of the sheath of a waveguide adapted to propagate the main mode of an emitted beam. by such a laser. Since the intermediate element 322 is formed of the same material as the sheath of the waveguide 330, the laser then has an effective index less than the optical index of the intermediate element. External element 321 is therefore necessary to ensure that an optical index element smaller than the effective index of the laser is under the laser. The optical index of the intermediate element 322 is greater than the effective index of the laser. If at the location of the outer element was the material of the intermediate element, there would be optical leakage of the laser to the substrate, without coupling to the waveguide. The presence of the external element, and in particular its base, is therefore essential. The arms of the outer member allow an adiabatic mode transition from the laser to the waveguide, even in the presence of this base of the outer member. These arms make it possible to initiate the optical coupling between the laser and the waveguide. They are at least partly in an initiation zone of the optical coupling, under the laser. The optical coupler according to the invention thus makes it possible to optically couple a laser and a waveguide, even in the case where the substrate and the waveguide do not allow it a priori. The coupler makes it possible, in particular, to couple a laser emitting at a central wavelength of between 2 and 10 μm and having an effective index less than 3.3, and a waveguide whose sheath has an index greater than 3.3. , especially when the substrate is silicon. It can be considered that the coupler according to the invention has a double point, a first point corresponding to the refined end of the central element, and a second point corresponding to the refined end of the intermediate element, the second point being threaded around the first tip. In the advantageous embodiment as shown in FIGS. 2A to 2C, the intermediate element 322 also extends between the arms of the outer element 321, above and below the central element 323. in other words, the intermediate element 322 also extends in direct contact with an upper face 323E of the central element, on the side of the substrate receiving the laser, and in direct contact with a lower face 323F of the central element, opposite to the side of the substrate receiving the laser. These direct contacts extend over the entire upper face and the lower face of the central element. The outer member 321 has a height greater than that of the central member 323, the central member is centered in height within the outer member, and the intermediate member 322 and the central member 323 fill together. the entire notch formed in the outer element 321. We will now present in detail, and with reference to FIGS. 3A and 3B, different relationships that may exist between the optical indices in the optical coupler, in the laser and in the waveguide.
    [0022] Figure 3A is a detail view of Figure 2B showing the optical coupler alone. The two left-hand figures of FIG. 3B correspond to the central figure of FIG. 2C. The two right-hand figures of Figure 3B correspond to the right figure of Figure 2C. Three slices are defined in the optical coupler, the different slices being parallel to each other and parallel to the plane (x0y). A first wafer 401 is intended to lie beneath the laser 100, except for an output region of the laser (see FIG. 2A). The laser output region is located on a lower face of the laser, bonded to the substrate. This output region is located on the side of one end of the laser, considered in the length direction. Preferably, the laser 100 has a rectangular parallelepiped shape, and the output region is a rectangle extending the full width of the laser at one end thereof. The laser output region is located on the waveguide side.
    [0023] The output region of the laser preferably corresponds to less than 30% of the lower surface of the laser. The first wafer 401 is formed in the base 321A of the outer member. Preferably, the first slice 401 and the base 321A are merged. The first slice is advantageously made of the same material as the arms of the outer member 321, for example aluminum nitride (AlN) or silica (SiO 2). Alternatively, the first slice is formed by silica, in which are formed pads containing germanium and silicon. To avoid any diffraction phenomenon, these pads have a maximum width less than V4, where λ is the central emission wavelength of the laser. These pads may be distributed according to a periodic mesh, of periodicity less than V2. These pads are formed by maintaining in places, during the manufacture of an optical guidance system according to the invention, a portion of the stack of layers forming the waveguide. Each pad therefore corresponds to a stack of the sheath material, the core material, and the sheath material of the waveguide, for example by a stack of silicon, silicon and germanium alloy, and silicon. The pads make it possible to improve the thermal conductivity of the first wafer 401. This avoids the heating of the laser which could adversely affect its operation. Preferably, the remainder of the outer member is pure silicon. The optical index of the first slice 401 is smaller than the effective index of the laser, and the optical index of the substrate is greater than the effective index of the laser. Thus, the first wafer 401, interposed between the laser and the substrate, prevents optical leakage of the laser towards the substrate, without coupling to the waveguide. This first slice 401 thus forms an optical isolation zone between the laser and the substrate. For example, the optical index of the substrate is 3.4 when this substrate is silicon, and the effective index of the laser is 3.2. Throughout the text, an optical index may be called simply "index".
    [0024] In addition, the optical index of the intermediate element is greater than the effective index of the laser. If at the location of the outer element was the material of the intermediate element, there would be optical leakage of the laser to the substrate, without coupling to the waveguide. The presence of the external element, and in particular its base, is therefore essential. When the first wafer 401 is in silica with pads as described above, the average optical index in the first wafer is slightly greater than the index of the silica, but nevertheless remains lower than the effective index of the laser. The difference between the average optical index in the first slice and the optical index in the remainder of the external element is sufficiently small to avoid an index jump resulting in optical losses. The index difference is for example less than 20%. A second wafer 402, directly contiguous to the first wafer 401, is intended to be under the output region of the laser as defined above (see also FIG. 2A). The second wafer 402 includes at least a portion of the central member and a portion of the outer member. The second slice 402 includes in particular the refined end of the central element, located in contact with the first walls 321C of the outer element. In the example shown in the figures, two first walls 321C of the outer element and the two second walls 323C of the central element, are in direct contact on the whole of the second wafer. According to a variant not shown, this second slice 402 comprises a portion of the intermediate element. The second slice is both an isolation zone, because of the presence of the external element, and optical coupling, because of the presence of the central element. At the input of the second slice 402, on the side of the first slice 401, the effective index in the second slice is smaller than the effective index of the laser. In the second slice 402, a beam from the main mode of the laser extends over a certain area. This beam corresponds to a portion of the main mode of the laser, transferred to the second slice. On the side of the first slice, this surface corresponds in a small proportion to the central element and in large part to the external element. Due to the gradual increase in the width of the central element, away from the first wafer, the proportion corresponding to the central element increases and that corresponding to the outer element decreases. Therefore, the effective index in the second slice grows progressively as one moves away from the first slice 401. This effective index increases until the effective index of the laser is reached. When this equality is obtained, the coupling between the laser and the optical coupler is achieved. For reasons of technological robustness, it is preferred that the effective index at the output of the second slice is slightly greater than the effective index of the laser, for example a few percent higher. Thus, the coupling between the laser and the waveguide is achieved by effective index matching. The second slice 402 thus forms an optical coupling zone. In order to sufficiently influence the value of the effective index in the second slice, the index of the external element must be sufficiently small relative to the index of the central element, typically two times smaller. The progressiveness of the increase in the effective index prevents leaks that would occur in case of sudden index jump. Preferably, this effective index increase corresponds to a spacing between the second walls 323C which increases slowly relative to the central emission wavelength of the laser. For example the two second walls 321C form between them, in the region 323D, an angle less than 10-3rad.
    [0025] Other conditions can be verified. For this purpose, the lower, upper and lateral sheaths of the optical coupler are defined. The upper sheath 404A of the coupler corresponds to a region of the optical coupler located in direct contact with the upper face 323E of the central element, and of the same width as the optical coupler. This width preferably corresponds to the width of the laser. The upper sheath 404A corresponds in particular to a region situated above the central element and delimited by a wall of the same width as the coupler and of the same generatrix as one of the second walls 323C of the central element. Upper sheath 404A includes a portion of the outer member at both ends thereof. In the middle is preferably the material of the intermediate element. The length of the upper sheath corresponds to the length of the central element. Similarly, the lower cladding 404B of the coupler, located in direct contact with the lower face 323F of the central element, is similarly defined.
    [0026] Lateral sheaths 404C, of the same height as the coupler, and each in direct contact with a side wall of the central element are also defined. In the region 323D, the side sheaths are formed entirely in the outer member. Outside this region, the side sheaths are formed in the outer member and the intermediate member. In the example illustrated in the figures, in the second slice, the lateral sheaths are formed entirely in the outer element. In FIG. 3B, the two figures at the top illustrate the upper and lower sleeves of the coupler, and the two figures at the bottom illustrate the lateral sheaths of the coupler.
    [0027] As one moves away from the first wafer 401, the proportion of the outer member in the lower sheath 404B decreases. Thus, the equivalent optical index of the lower sheath increases. The equivalent optical index of a medium refers to its average optical index, that is to say the average of the indices of the zones forming this medium, weighted by the volumes of these zones, where each zone corresponds to a material of different nature. . Now, everywhere under the laser 100, the equivalent optical index of the lower sheath 404B is advantageously less than the effective index of the laser. For this, the second wafer 402 must be arranged so that at the output thereof, the equivalent optical index of the lower sheath 404B is lower than the effective index of the laser. This prevents the main mode of the laser passes through the lower sheath 404B, without coupling in the optical coupler. In other words, it avoids this mode of the laser leaking directly into the substrate. Preferably, the upper sheath 404A satisfies this same condition.
    [0028] In Figure 3B, the upper and lower sheaths are formed by AIN on the sides and silicon in the center. In the two figures on the left, these sheaths have an optical index equivalent to 3.1. In the two figures on the right, these sheaths have an equivalent optical index of 3.2. Thus, the increase in the equivalent optical index of the lower and upper sheaths is illustrated as one moves away from the first wafer 401. In entry into the second wafer 402, the beam propagating in the (corresponding to a portion of the fundamental mode of the laser, transferred to the input of the second slice) extends partly in the external element of low index. Thus, at the input of the second slice 402, it is possible that the effective index in the second slice is smaller than the index of the substrate. Under such conditions, an optical leak towards the substrate is avoided, thanks to a great thickness (dimension along the axis (Oy), also called height) of the lower sheath 404B. In particular, the lower sheath 404B has a thickness greater than or equal to X0 / 2, where Lo is the emission wavelength of the laser in vacuum. The lower sheath 404B of the coupler thus provides optical isolation between the coupler and the substrate. The second slice 402 thus forms an optical isolation zone. The second slice preferably has a length of less than 5 mm. Thus, poor thermal conductivity of the material of the outer member is not problematic. A third slice 403 is directly contiguous to the second slice 402, without any part of the laser located above (see also FIG. 2A). In the third slice 403, a beam from the main mode of the laser extends over a certain area. This beam corresponds to a portion of the main mode of the laser, transferred in the second slice, then the third slice. On the side of the second slice, that is to say at the input of the third slice, this surface extends over a part of the central element, a part of the external element and, where appropriate, a part of the intermediate element. As one moves away from the second slice, the outer element moves away from the central element so that the proportion of the outer element in that area decreases, and that of the element intermediate (and possibly the central element) increases. Thus, the effective index in the third slice grows progressively between the entry and the exit of the third slice, until it approaches and even matches the effective index of the waveguide. The progressive increase of the effective index in the third slice 403 performs an adiabatic mode transformation to the waveguide. In other words, the beam coming from the main mode of the laser, transferred into the second wafer, then into the input of the third wafer, is progressively brought to the input of the waveguide, without being subjected to index variations too much. brutal. Preferably, this index increase corresponds to a spacing between the first walls 321C which increases slowly relative to the central emission wavelength of the laser, ie an angle between the first two walls 321C less than 10-3rad.
    [0029] When the effective index in the third slice reaches the value of the effective index of the waveguide, the presence of the external element is no longer necessary. This condition makes it possible to define the length of the external element, and therefore of the optical coupler according to the invention. Thus, the outer member 321 provides both optical isolation between the laser and the substrate, and progressive adaptation of the effective index in the coupler until the effective index of the waveguide 330 is reached. In the example shown in the figures, in the third slice 403, the central element finishes to widen, and the intermediate element appears little by little.
    [0030] In the second wafer 402 and then the third wafer 403, the optical coupler 320 thus performs an optical coupling of the laser 100 towards the waveguide 330 and offers an adiabatic mode adaptation, that is to say by index evolution. progressive so as to prevent losses by reflection, diffusion, and transfer to higher order modes. Optical coupler 320 also prevents optical leakage of the laser to the substrate. FIGS. 4A and 4B schematically illustrate a second system embodiment 1000 comprising an optical coupler according to the invention. FIG. 4A corresponds to FIG. 2A, on which a few details relating to the laser 100 have been provided. FIG. 4B corresponds to FIG. 2B, without hatching for reasons of readability. The laser 100 has, on its upper face, a network structure, called top-DFB for English "distributed feedback". This structure makes it possible to fix the emission wavelength of the laser 100. The upper face and the lateral faces of the laser are covered with a highly reflective coating 102, for example metal, in particular gold. Thus, the emission of the laser is not done by the wafer, but by the lower face, in the output region as defined with reference to FIG. 3A. FIGS. 4A and 4B make it possible to illustrate a particular example of a system and coupler according to the invention, in particular dimensions. The laser 100 has the following characteristics: central wavelength of emission: 4.5 11m; InP upper and lower sleeves 101 (and lateral), index 3.1; core 103 (active zone) alloy AllnAs and GalnAs, index 3.37; effective laser index: 3.23; ELc thickness of the heart: 1.5 11m; ELG thickness of the upper sheath: 3 11m; ELGI thickness of the lower sheath: 1 μm (this thickness is preferably less than or equal to 1 μm, to avoid isolating the entire laser from the coupler, which would prevent optical coupling); width of the heart: 4 iim.
    [0031] The waveguide 330 has the following characteristics: index of sheath 332 in silicon: 3.4; core index 331 in silicon alloy (60%) and germanium (40%): 3.6; effective index of the waveguide: 3.46 EGC thickness of the heart: 2.5 μm; EGG thickness of the upper sheath: 0.5 μm; EGGI thickness of the lower sheath: 21.1m; width of the heart: 3 iim.
    [0032] The optical coupler 320 has the following characteristics: outer element 321 silica, optical index 1.44; minimum width Wo of the central element 323: 0.5 11m; width Wf of the central element, at the output of the second section: 1.4 11m; length L of the second slice 402: 2000 iim.
    [0033] FIG. 5 schematically illustrates the optical coupling produced by an optical coupler according to the invention. Zone 501 corresponds to the optical coupler, and zone 502 corresponds to the laser disposed above. The axis (Oz) extends over the entire length of the second slice. It can be seen that from the input to the output of the second slice, part of the main mode of the laser is progressively coupled in the optical coupler. At the output of the second slice, the optical power distribution between the optical coupler and the laser is for example of the order of 50% -50%, for example 45% -55%. This non-total coupling makes it possible to maintain a Fa-bry-Perot effect in the laser, which is usually achieved by partial reflection of the laser output wafer. In the end, 45% of the optical power of the laser is transmitted, for example, in the waveguide, thanks to the optical coupler according to the invention. It can be shown that coupling efficiency increases with the length of the second wafer. This efficiency also depends on the widths Wo and Wf of the central element, defined above. These widths determine the effective indices at the input and at the output of the second slice. In particular, if the width Wf of the central element at the output of the second slice is less than a limit value, the condition according to which the effective index of the laser is equal to the effective index at the output of the laser is not reached. the second tranche. In this case, the coupling is not performed. The lower limit value of Wf is about 1.1 μm under the conditions of FIGS. 4A and 4B. When the width Wf of the central element at the output of the second slice increases, the equivalent optical index of the upper cladding of the coupler and of the lower cladding of the coupler may exceed the effective index of the laser (because the proportion of the external element in the upper and lower sheath is then very weak). The main mode of the laser leaks into the substrate, which decreases the coupling efficiency. An upper limit value of Wf is about 1.4 μm under the conditions of Figures 4A and 4B.
    [0034] It is also shown that the shape of the first walls of the external element influences the efficiency of the coupling. First walls whose generator is an exponential type curve, can for example improve this efficiency. Thus, the invention makes it possible to choose the value of the coupling ratio between the laser and the waveguide. FIG. 6 illustrates an example of a method of manufacturing an optical coupler according to the invention and an optical guidance system according to the invention.
    [0035] Preferably, the optical coupler is made at the same time as the waveguide in which it is adapted to couple a light beam. This example corresponds to the particular case in which the sheath of the waveguide is formed by the material of the substrate.
    [0036] During a first step 601, a layer 661 of an alloy of silicon and germanium is epitaxially deposited on a silicon substrate 660. The layer 661 is then etched by means of lithography and etching steps, to define the shape of the waveguide core and a blank of the central element of the coupler. During this step, it is not necessary to engrave the central element in a refined form. A rectangular parallelepiped shape may be sufficient at this stage. In a variant, the central element is directly etched to give it its final shape. In step 602, a new layer 662 of silicon is deposited by epitaxy, which completely covers the portion of the layer 661 remaining after the etching.
    [0037] The new layer 662 then undergoes a planarization step by mechanical and chemical polishing (CMP, for "Chemical Mechanical Polishing"). If necessary, it is possible, in a step 603, to epitaxially deposit an additional layer 663 of silicon in order to increase the silicon thickness above the portion of the layer 661 remaining after the etching. The additional layer 663 being deposited on a flat surface, it will also be flat. In step 604, the silicon layer 662 is etched by etching 663, if necessary 663, so as to define a housing 664 in which will then extend the outer element of the optical coupler. At this step 604, it is also possible to etch part of the layer 661 to define the refined shape of the central element. This etching thus makes it possible to produce the intermediate element of the optical coupler, which will be located between the etched housing and the central element of the coupler. In step 605, the housing is filled with the material of the outer member of the coupler, which forms said outer member. The set is then planarized by CMP. At this stage, the optical coupler according to the invention and the waveguide were thus produced. In step 606, the epitaxy of the laser 100 is adhered to the top of the coupler, by molecular bonding, thanks to a thin layer of silica less than or equal to 100 nm thick, thick enough to achieve the molecular bonding, but thin enough to limit absorption losses and allow coupling. This thin layer of silica can be deposited on the top of the coupler. Alternatively, the outer member of the coupler is silica, and the bonding uses a thin residual layer of silica introduced into the housing in step 605, as well as a thin layer of silica deposited directly on the laser. After bonding the epitaxy of the laser 100, the laser 100 is made (engraving of the laser guide, contact deposits and highly reflective treatments) (see FIG. 4B). The optical coupler and the optical guidance system according to the invention have particularly advantageous applications in the field of integrated gas sensors on a substrate. Such sensors measure absorption wavelengths constituting the signature of a gas, these wavelengths being in the mid-infrared, that is to say between 2 and 10 μm. The optical coupler and the optical guidance system according to the invention can also be used in any other field of integrated photonics on silicon.
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. Optical coupler (320) integrated on a substrate (200), for optically coupling a laser (100) and a waveguide (330), characterized in that it comprises: an external element (321) having a base (321A) from which extend two arms (321B) separated by a notch, said notch being delimited laterally by two first walls (321C) spacing decreasing towards the bottom of the notch; a central element (323), located in the notch, delimited laterally by two second walls (323C), and having a first region (323D) where said two second walls are in direct contact with said first two walls (321C) until at the bottom of the notch; and an intermediate member (322), extending between the outer member and the central member, directly between a first wall (321C) and a second wall (323C) where a first wall is not in direct contact with a second wall; the optical index of the central element (323) being greater than the optical index of the intermediate element (322), itself greater than the optical index of the base of the outer element (321).
    [0002]
    2. Optical coupler (320) according to claim 1, characterized in that the intermediate element (322) also extends, inside the notch, directly on an upper face (323E) and on a lower face. (323F) of the central element.
    [0003]
    3. Optical coupler (320) according to claim 1 or 2, characterized in that the central element (323) is made of germanium or an alloy of germanium and silicon.
    [0004]
    4. optical coupler (320) according to any one of claims 1 to 3, characterized in that the intermediate element (322) is silicon, or an alloy of germanium and silicon.
    [0005]
    5. Optical coupler (320) according to any one of claims 1 to 4, characterized in that the outer member (321) comprises silica, aluminum oxide or aluminum nitride.
    [0006]
    6. Optical coupler (320) according to any one of claims 1 to 5, characterized in that it consists of three slices extending one after the other, and comprising: a first slice (401 ), intended to be under the laser except for an output region of the laser, and constituted by at least a portion of the base (321A) of the outer member; a second wafer (402) directly adjacent to the first wafer, intended to be under said laser output region, and including one end of the core member (323); and a third slice (403) directly adjacent to the second slice.
    [0007]
    7. Optical coupler (320) according to claim 6, characterized in that it is intended to optically couple a laser and a waveguide, so that the optical index of the first wafer (401) is less than 1 effective index of the laser (100), and the optical index of the intermediate element (322) is greater than the effective index of the laser (100).
    [0008]
    8. Optical coupler (320) according to claim 6 or 7, characterized in that the material of the first wafer (401) consists of a silica matrix in which are integrated pads containing germanium and silicon.
    [0009]
    9. optical coupler (320) according to any one of claims 6 to 8, characterized in that it is intended to optically couple a laser and a waveguide, so that: the effective index in the second slice (402) progressively increases from the input to the output of the second wafer, from a face adjacent to the first wafer to a face adjacent to the third wafer; the effective input index of the second slice is smaller than the effective index of the laser (100); and the effective index at the output of the second slice is greater than the effective index of the laser (100).
    [0010]
    10. An optical coupler (320) according to any one of claims 6 to 9, characterized in that it is intended to optically couple a laser and a waveguide, so that: a region of the optical coupler, likewise width thereof, located under the central element and in direct contact with its lower face (323F), defines a lower sheath of the coupler (404B); a region of the optical coupler, of the same width as the latter, located on the central element and in direct contact with its upper face (323E), defines an upper cladding of the coupler (404A); and at the output of the second wafer (402), the equivalent optical index of the lower sheath of the coupler and the equivalent optical index of the upper sheath of the coupler are each smaller than the effective index of the laser.
    [0011]
    An optical coupler (320) according to any one of claims 6 to 10, characterized in that it is intended to optically couple a laser and a waveguide, so that: a region of the optical coupler, likewise width that it, located under the central element and in direct contact with its lower face (323F), defines a lower sheath of the coupler (404B); and the thickness of the lower cladding of the coupler (404B) is greater than or equal to X0 / 2, where lo is the emission wavelength of the laser (100) in vacuum.
    [0012]
    12. Optical coupler (320) according to any one of claims 6 to 11, characterized in that it is intended to optically couple a laser and a waveguide, so that the effective index in the third portion ( 403) progressively increases from the input to the output of the third slice until it reaches the value of the effective index of the waveguide (330).
    [0013]
    13. optical coupler (320) according to any one of claims 1 to 12, characterized in that it is intended to optically couple a quantum cascade laser (100) and a waveguide (330).
    [0014]
    14. A method of manufacturing an optical coupler (320) according to any one of claims 1 to 13, characterized in that it comprises the following steps: deposition (601), on a substrate, of a first layer ( 661) for forming the central element, and etching of the first layer; depositing (602) a second layer (662), covering the first etched layer, and planarizing the second layer; etching (604) the at least one first layer to form a housing (664) flanking an end of the first etched layer (661); filling (605) the housing to form the outer member (321) of the optical coupler.
    [0015]
    15. Optical guidance system (1000) integrated on a substrate, characterized in that it comprises: an optical coupler (320) according to any one of claims 1 to 13; a waveguide (330), located in the extension of the optical coupler so that a core (331) of said waveguide extends in the extension of the central element (323) and is formed of a same material, and a sheath (332) of said waveguide extends in the extension of the intermediate member (322) and is formed of the same material; and a laser (100), located above at least a portion of the optical coupler; the optical coupler (320) being adapted to optically couple said laser and said waveguide.
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    FR3074587B1|2017-12-06|2020-01-03|Commissariat A L'energie Atomique Et Aux Energies Alternatives|PHOTONIC CHIP WITH OPTICAL PATH FOLDING AND INTEGRATED COLLIMATION STRUCTURE|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1459050A|FR3026497B1|2014-09-25|2014-09-25|OPTICAL COUPLER INTEGRATED ON A SUBSTRATE AND COMPRISING THREE ELEMENTS|FR1459050A| FR3026497B1|2014-09-25|2014-09-25|OPTICAL COUPLER INTEGRATED ON A SUBSTRATE AND COMPRISING THREE ELEMENTS|
    US14/857,223| US9547137B2|2014-09-25|2015-09-17|Optical coupler integrated on a substrate and comprising three elements|
    EP15186780.1A| EP3001230B1|2014-09-25|2015-09-25|Optical coupler integrated on a substrate and comprising three elements|
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